Power semiconductor device

Power semiconductor device with a semiconductor substrate and a cathode metallization being formed on a cathode side and an anode metallization being formed on an anode side opposite the cathode side, said semiconductor substrate comprising a four-layer structure with layers of different conductivity types,

• said four-layer structure defining an inner structure of a thyristor, which can be turned-off via a gate electrode, and
• said four-layer structure comprising
• an outer cathode region of a first conductivity type contacting the cathode metallization,
• a first base layer of the second conductivity type contacting the cathode region on a side opposite the cathode metallization,
• a second base layer of the first conductivity type contacting the first base layer on a side opposite the outer cathode region, and
• an outer anode layer of second conductivity type contacting the anode metallization,
• said gate electrode being arranged on the cathode side and electrically contacting said first base layer,
• wherein
• the first base layer comprising a cathode base region and at least one gate baseregion,
• said cathode base region being arranged adjacent to the cathode region on the side opposite the cathode metallization and contacting at least a central area of the cathode region,
• said at least one gate base region being disposed adjacent to the second base layer and bordering on the cathode base region,
• said at least one gate base region having the same nominal doping density as the cathode base region in at least one first depth, the first depth being given as a perpendicular distance from the side of the cathode region, which is opposite the cathode metallization,
• said at least one gate base region electrically contacting the gate electrode,
• and having at least one of the following features:
• a higher doping density than the cathode base region in at least one second depth, the second depth being greater than said first depth or
• a greater depth than the cathode base region.