Semiconductor device including poly-si and method of manufacturing the same
AssigneeSamsung Electronics Co., Ltd.
InventorsWenxu Xianyu, Jung-hyun Lee, Hyung-Jin Bae, Young-soo Park
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Abstract
A semiconductor device including polysilicon (poly-Si) and method of manufacturing the same are provided. The semiconductor device includes a TaNx material layer and a poly-Si layer formed on the TaNx material layer. The semiconductor device including poly-Si may be manufactured by forming a TaNx material layer and forming a poly-Si layer by depositing silicon formed on the TaNx material layer and annealing silicon.
Claims17
A semiconductor device including polysilicon (poly-Si), comprising:
- a TaNx material layer;
- and
- a poly-Si layer on the TaNx material layer.
A method of manufacturing a semiconductor device including polysilicon (poly-Si), the method comprising:
- forming a TaNx material layer;
- and
- forming a poly-Si layer by depositing silicon formed on the TaNx material layer and annealing silicon.
Dependencies are inferred from the claim text.