Pmd layer of semiconductor device

A method, comprising:

• forming an oxide layer over a semiconductor substrate;
• forming a cap oxide layer over the oxide layer;
• and
• polishing the cap oxide layer to form a pre-metal dielectric layer comprising the oxide layer and the polished cap oxide layer.

A method, comprising:

• forming a pre-metal dielectric (PMD) layer over a semiconductor substrate through a chemical vapor deposition (CVD) process;
• selectively etching the pre-metal dielectric layer to form a contact hole and depositing a barrier metal layer over the pre-metal dielectric layer including the contact hole;
• forming a contact plug within the contact hole;
• and
• forming a metal wiring over the semiconductor substrate, the metal wiring being electrically connected to the semiconductor substrate through the contact plug.

A device, comprising:

• a pre-metal dielectric (PMD) layer formed over a semiconductor substrate through a chemical vapor deposition (CVD) process;
• a contact hole formed by selectively etching the pre-metal dielectric layer;
• a barrier metal layer deposited over the pre-metal dielectric layer;
• a contact plug formed within the contact hole;
• and
• a metal wiring formed over the semiconductor substrate on which the contact plug is formed and electrically connected to the semiconductor substrate through the contact plug.