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US 2008/0157387 A1Published application
Semiconductor device and method of fabricating the same
AssigneeDongbu HiTek Co., Ltd.
InventorJae Young CHOI
Life of this patent
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Abstract
The present invention relates to a semiconductor device, comprising a plurality of word lines arranged on a semiconductor substrate, wherein plurality of word lines are grouped into groups of two word lines, a spacer dielectric layer formed between each group of two word lines, and an interlayer dielectric layer formed so as to fill the area between the word lines in each group of two word lines and cover the word lines and the spacer dielectric layers.
Claims10
A semiconductor device comprising:
- a plurality of word lines arranged on a semiconductor substrate, wherein the word lines are grouped into groups of two word lines;
- a plurality of spacer dielectric layers formed in a space between the groups of two word lines;
- and
- an interlayer dielectric layer which is formed so as to fill the spaces between word lines in the groups of two word lines and cover the word lines and the spacer dielectric layers.
1 more element
A method of fabricating a semiconductor device comprising:
- forming a plurality of word lines on a semiconductor substrate, wherein in the plurality of word lines are grouped into a plurality of groups of two word lines;
- forming a plurality of spacer dielectric layers between the word lines;
- forming a spacer mask film that covers the spacer dielectric layer formed between the groups of two word lines;
- removing the spacer dielectric layer formed between the word lines in a group of two word lines using the spacer mask film as an etching barrier;
- and
- forming a interlayer dielectric layer between the space between word lines in the groups of two word lines and over the spacer dielectric layer and word lines.
3 more elements
A method of fabricating a semiconductor device comprising:
- forming a plurality of word lines on a semiconductor substrate, wherein in the plurality of word lines are grouped into a plurality of groups of two word lines;
- forming a device isolating layer on the semiconductor substrate;
- defining an active layer by removing a portion of the device isolating layer in an area between the groups of two word lines;
- forming a plurality of spacer dielectric layers in the area between the groups of two word lines;
- forming a spacer mask film that covers the spacer dielectric layer formed between the groups of two word lines;
- removing any residual spacer dielectric layer using the spacer mask film as an etching barrier;
- and
- forming a interlayer dielectric layer between the space between word lines in the groups of two word lines and over the spacer dielectric layer and word lines.
5 more elements
Dependencies are inferred from the claim text.