Semiconductor Device Having Dummy Pattern and the Method for Fabricating the Same
AssigneeHynix Semiconductor Inc.
InventorByung Ho Nam
Life of this patent
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Abstract
A semiconductor device includes a semiconductor substrate with a pattern region and a dummy region, an interlayer dielectric film arranged on the semiconductor substrate, a semiconductor layer pattern arranged on the interlayer dielectric film in the pattern region, a dummy pattern arranged on the interlayer dielectric film in the dummy region, a contact plug arranged inside the interlayer dielectric film, and the contact plug connecting the semiconductor layer pattern to the semiconductor substrate, and a dummy plug arranged inside the interlayer dielectric film, the dummy plug corresponding to the dummy pattern. A method for fabricating the semiconductor device includes forming these structures.
Claims9
A semiconductor device having a dummy pattern comprising:
- a semiconductor substrate including a pattern region and a dummy region;
- an interlayer dielectric film arranged on the semiconductor substrate;
- a semiconductor layer pattern arranged on the interlayer dielectric film in the pattern region;
- a dummy pattern arranged on the interlayer dielectric film in the dummy region;
- a contact plug arranged inside the interlayer dielectric film, and the contact plug connecting the semiconductor layer pattern to the semiconductor substrate;
- and
- a dummy plug arranged inside the interlayer dielectric film, the dummy plug corresponding to the dummy pattern.
A method for fabricating a semiconductor device having a dummy pattern comprising:
- forming an interlayer dielectric film on a semiconductor substrate including a pattern region and a dummy region;
- forming a photoresist pattern on the interlayer dielectric film such that the pattern region and the dummy region are partially exposed;
- etching the interlayer dielectric film exposed through the photoresist pattern as an etching mask to form a contact hole and a dummy contact hole;
- filling the contact hole and the dummy contact hole with a conductive material to form a contact plug and a dummy plug;
- depositing a semiconductor layer on the contact plug and the dummy plug;
- and
- subjecting the semiconductor layer to patterning to form a semiconductor layer pattern and a dummy pattern.
Dependencies are inferred from the claim text.