Semiconductor device and fabricating method thereof
AssigneeDongbu HiTek Co., Ltd.
InventorCheon Man Shim
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Abstract
The present invention relates to a semiconductor device comprising a first wafer comprising an isolating layer formed on a silicon substrate, a barrier metal layer formed on the isolating layer, a first seed layer formed on the barrier metal layer, a first metal layer formed on the first seed layer, a surface of which is cleaned with NE14 or DHF, a barrier dielectric layer formed of SiCN on the first metal layer, a second seed layer formed on the barrier dielectric layer and a second metal layer formed on the second seed layer.
Claims12
A semiconductor device comprising:
- an isolating layer formed on a silicon substrate;
- a barrier metal layer formed on the isolating layer;
- a first seed layer formed on the barrier metal layer;
- a first metal layer formed on the first seed layer, a surface of the first metal layer being clean-treated using either NE14 or DHF;
- a barrier dielectric layer formed on the first metal layer, the barrier dielectric layer being formed of a SiCN material;
- a second seed layer formed on the barrier dielectric layer;
- and
- a first wafer comprising a second metal layer formed on the second seed layer.
A method of forming a semiconductor device, the method comprising:
- forming an isolating layer on a silicon substrate;
- forming a barrier metal layer on the isolating layer;
- forming a first seed layer on the barrier metal layer;
- forming a first metal layer on the first seed layer;
- clean-treating a surface of the first metal layer using either NE14 or DHF;
- forming a barrier dielectric layer of a SiCN material on the first metal layer;
- forming a second seed layer on the barrier dielectric layer;
- and
- forming a first wafer comprising a second metal layer on the second seed layer.
Dependencies are inferred from the claim text.