Semiconductor device fabricating method
OwnerJae-Won Haninventor
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Abstract
A semiconductor device may includes a first semiconductor substrate provided on a second semiconductor substrate in a system-in-package arrangement. The first semiconductor substrate may include a plurality of through electrodes formed in first semiconductor substrate. The second semiconductor substrate may include a transistor layer formed over the second semiconductor substrate and a multilayer metal layer formed over the second semiconductor substrate. A plurality of connection electrodes for electrically connecting the first semiconductor substrate to the second semiconductor substrate.
Claims20
A method comprising:
- forming a plurality of upper devices on a first wafer;
- classifying the plurality of upper devices into good upper devices and bad upper devices based on the operational state of the upper devices;
- separating the good upper devices from the first wafer;
- forming a plurality of lower devices on a second wafer, wherein the plurality of lower devices include good lower devices and bad lower devices;
- classifying the plurality of lower devices into good lower devices and bad lower devices;
- selecting the good lower devices from among the lower devices;
- and
- forming a plurality of system-in-package type semiconductor devices by stacking the good upper devices separated from the first wafer on the good lower devices provided on the second wafer.
A method comprising:
- forming a plurality of upper devices including a plurality of photodiode cells and a plurality of color filters on a first wafer;
- separating good dies from the first wafer;
- forming a plurality of lower devices including a logic circuit on a second wafer and selecting good dies from among the plurality of lower devices;
- and
- forming a plurality of system-in-package type semiconductor devices by stacking the good dies separated from the first wafer on the good dies provided on the second wafer.
An apparatus comprising:
- a first semiconductor substrate including a plurality of through electrodes formed in first semiconductor substrate;
- a second semiconductor substrate including a transistor layer formed over the second semiconductor substrate and a multilayer metal layer formed over the second semiconductor substrate;
- a plurality of connection electrodes each electrically connected at one end to a respective through electrode and at another end to the multilayer metal layer,
- wherein the first semiconductor substrate is provided on the second semiconductor substrate in a system-in-package arrangement.
Dependencies are inferred from the claim text.