Semiconductor device and method of manufacturing the same
AssigneeElpida Memory, Inc.
InventorMitsuhiro HORIKAWA
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Abstract
Disclosed is a method of manufacturing a semiconductor device formed by laminating a capacitor including a bottom metal electrode, a capacitive insulating film, and an upper metal electrode. When the capacitive insulating film is formed by performing a first step of forming a first dielectric layer on the bottom metal electrode by a vapor phase film forming method using a precursor gas that contains constituent elements of a dielectric; and a second step of forming a second dielectric layer on the first dielectric layer by a vapor phase film forming method using a precursor gas that contains constituent elements of a dielectric, a film forming temperature in the first step is set so as to be lower than a film forming temperature in the second step.
Claims14
A method of manufacturing a semiconductor device formed by laminating a capacitor including a bottom metal electrode, a capacitive insulating film, and an upper metal electrode,
- wherein, when the capacitive insulating film is formed by performing a first step of forming a first dielectric layer on the bottom metal electrode by a vapor phase film forming method using a precursor gas that contains constituent elements of a dielectric;
- and a second step of forming a second dielectric layer on the first dielectric layer by a vapor phase film forming method using a precursor gas that contains constituent elements of a dielectric, a film forming temperature in the first step is set so as to be lower than a film forming temperature in the second step.
A semiconductor device formed by laminating a capacitor including a bottom metal electrode, a capacitive insulating film, and an upper metal electrode,
- wherein:
- the capacitive insulating film includes a first dielectric layer and a second dielectric layer;
- when compared in a film thickness direction, defect density of the first dielectric layer is lower than defect density of the second dielectric layer at a side of the bottom metal electrode when film thickness is less than 7 nm;
- and
- the second dielectric layer has defect density lower than defect density of the first dielectric layer at a side of the upper metal electrode from the center in the film thickness direction.
A semiconductor device formed by laminating a capacitor including a bottom metal electrode, a capacitive insulating film and an upper metal electrode,
- wherein:
- the capacitive insulating film includes a first dielectric layer and a second dielectric layer;
- and
- oxygen permeability of the first dielectric layer is lower than oxygen permeability of the second dielectric layer.
Dependencies are inferred from the claim text.