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US 2008/0157278 A1Published application
Semiconductor device and method for fabricating the same
AssigneeHynix Semiconductor Inc.
InventorsKwan-Woo Do, Jae-Sung Roh, Kee-Jeung Lee, Deok-Sin Kil, Young-Dae Kim, Jin-Hyock Kim, Kyung-Woong Park, Han-Sang Song
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Abstract
A capacitor includes a lower electrode, a dielectric layer, an upper electrode, and a ruthenium oxide layer. At least one of the lower electrode and the upper electrode is formed of a ruthenium layer, and the ruthenium oxide layer is disposed next to the ruthenium layer.
Claims29
A capacitor comprising:
- a lower electrode;
- an upper electrode;
- a dielectric layer disposed between the lower electrode and the upper electrode;
- and
- a ruthenium oxide layer,
- wherein at least one of the lower electrode and the upper electrode comprises a ruthenium layer, and the ruthenium oxide layer is disposed adjacent to the ruthenium layer.
3 more elements
A method for fabricating a capacitor, the method comprising:
- forming a first ruthenium oxide layer over a substrate;
- forming a lower electrode ruthenium layer for a lower electrode on the first ruthenium oxide layer;
- forming a dielectric layer over the lower electrode ruthenium layer;
- and
- forming an upper electrode conduction layer for an upper electrode over the dielectric layer.
2 more elements
Dependencies are inferred from the claim text.