Mim capacitor
OwnerJeong-Ho Park, Ho-Yeong Choeinventors
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Abstract
Embodiments relate to a metal-insulator-metal (MIM) capacitor that may include a lower insulation layer where a capacitor lower metal layer is already formed, an intermediate structure, a first conductive structure, and a second conductive structure. The intermediate structure may include a first capacitor insulation pattern, a capacitor middle metal layer, a second capacitor insulation pattern, a capacitor upper metal layer, and an insulation pattern formed in sequence over the lower insulation layer. The first conductive structure may include a copper-based material and may be coupled between the capacitor upper metal layer and the capacitor lower metal layer. The second conductive structure may include a copper-based material and is coupled to the capacitor middle metal layer.
Claims19
A method, comprising:
- forming a capacitor lower metal layer over a lower insulation layer;
- forming a first capacitor insulation pattern, a capacitor middle metal layer, a second capacitor insulation pattern, a capacitor upper metal layer, and an insulation pattern over the lower insulation layer;
- forming a dielectric layer over the lower insulation layer;
- etching the dielectric layer to form a first inter-layer insulation pattern including contact holes;
- filling the contact holes with a sacrificial photoresist material;
- etching the first inter-layer insulation pattern and the sacrificial photoresist material to form a second inter-layer insulation pattern including trenches;
- removing the sacrificial photoresist material filled in the contact holes;
- performing a blanket etch-back process to expose the patterned capacitor upper metal layer, the capacitor lower metal layer, and the patterned capacitor middle metal layer;
- and
- forming a conductive structure over the second inter-layer insulation pattern.
A device, comprising:
- a capacitor lower metal over a lower insulation layer;
- an intermediate structure including a first capacitor insulation pattern, a capacitor middle metal layer, a second capacitor insulation pattern, a capacitor upper metal layer, and an insulation pattern over the lower insulation layer;
- a first conductive structure including a copper-based material coupled between the capacitor upper metal layer and the capacitor lower metal layer;
- and
- a second conductive structure including a copper-based material and coupled to the capacitor middle metal layer.
A device, comprising:
- a capacitor lower metal layer over a lower insulation layer;
- a capacitor upper metal layer over the capacitor lower metal layer and the lower insulation layer;
- a capacitor middle metal layer coupled between the lower insulation layer and the capacitor upper metal layer;
- a first conductive structure coupled between the capacitor upper metal layer and the capacitor lower metal layer;
- and
- a second conductive structure coupled to the capacitor middle metal layer.
Dependencies are inferred from the claim text.