Metal to Metal Low-K Antifuse

Abstract

The embodiments of the invention generally relate to fuse and anti-fuse structures and include a copper conductor positioned within a substrate and a metal cap on the first conductor. A low-k dielectric is on the substrate and the metal cap. A tantalum nitride resistor is on the dielectric, and the resistor is positioned above the metal cap such that an antifuse element region of the dielectric is positioned between the resistor and the metal cap. The antifuse element region of the dielectric is adapted to change resistance values by application of a voltage difference between the resistor and the copper conductor/metal cap. The antifuse element region has a first higher resistance (more closely matching an insulator) before application of the voltage and a second lower resistance (more closely matching a conductor) after application of such voltage. In one embodiment herein the voltage can be supplemented by heating through application of voltage through the first conductor which helps change the resistance of the antifuse element region.

Dependencies are inferred from the claim text.