Fuse Element Using Low-K Dielectric

Abstract

A programmable structure such as a write once read many (WORM) or one time programmable read only memories (OTPROM) is disclosed herein. The structure includes a first conductor (such as copper) positioned within a substrate and a metal cap on the first conductor. A low-k dielectric is on the substrate and the metal cap. A tantalum nitride resistor is on the dielectric, and the resistor is positioned above the metal cap such that a programmable region of the dielectric is positioned between the resistor and the metal cap. The first conductor (including the metal cap), the programmable region of the dielectric, and the resistor form a metal-insulator-metal capacitor. Further, the programmable region of the dielectric is adapted to be permanently changed from heat produced by the resistor when a voltage difference is applied to the first and second ends of the resistor, respectively, through the first and second contacts. Thus, the capacitor comprises a first capacitance before the programmable region is permanently changed by the heat from the resistor and comprises a second capacitance after the programmable region is permanently changed by the heat from the resistor.

Dependencies are inferred from the claim text.