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US 2008/0157234 A1Published application
Semiconductor device and method of manufacturing the same
OwnerJi Ho Honginventor
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Abstract
Provided are a semiconductor device and a method of manufacturing the same. In the semiconductor device, an insulating layer and a polysilicon layer are formed on a substrate, and a notch region is formed at a portion of the polysilicon layer contacting the insulating layer. The widths of the polysilicon layer and the insulating layer are respectively reduced in the notch region.
Claims20
A semiconductor device comprising:
- an insulating layer on a substrate;
- a polysilicon layer on the insulating layer;
- and
- a notch region at a portion of the polysilicon layer contacting the insulating layer,
- wherein respective widths of the polysilicon layer and the insulating layer are reduced at the notch region.
2 more elements
A method of manufacturing a semiconductor device, comprising:
- forming an insulating material, a polysilicon material, and a mask material on a substrate;
- performing a first dry etching process to form an insulating layer, a polysilicon layer, and a mask layer;
- and
- performing a second dry etching process using the mask layer as a mask to form a notch region on the insulating layer and a lower region of the polysilicon layer.
1 more element
Dependencies are inferred from the claim text.