Semiconductor Device Having A Modified Recess Channel Gate And A Method For Fabricating The Same
AssigneeHynix Semiconductor Inc.
InventorTae Kyun Kim
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Abstract
A semiconductor device having a modified recess channel gate includes active regions defined by a device isolation layer and arranged at regular intervals on a semiconductor substrate, each active region extending in a major axis and a minor axis direction, a trench formed in each active region, the trench including a stepped bottom surface in the minor axis direction of the active region, and a recess gate formed in the trench.
Claims12
A semiconductor device having a modified recess channel gate comprising:
- active regions defined by a device isolation layer and arranged at regular intervals on a semiconductor substrate, each active region extending in a major axis direction and a minor axis direction;
- a trench formed in each active region, the trench comprising a stepped bottom surface in the minor axis direction of the active region;
- and
- a recess gate formed in the trench.
The semiconductor device according to claim X, wherein the stepped bottom surface extends through at least half of the active region in the minor axis direction thereof.
The semiconductor device according to claim 57 wherein the trench has a depth of 1,000 Å to 1,500 Å.
A method of fabricating a semiconductor device having a modified recess channel gate, comprising:
- forming a device isolation layer for defining an active region on a semiconductor substrate, the active region extending in a major axis direction and a minor axis direction;
- forming a mask pattern extending in the major axis direction on the semiconductor substrate to expose a specified portion of the active region, the specified portion extending in the major axis direction;
- forming a stepped surface in the active region in the minor axis direction by etching the semiconductor substrate in the portion of the active region exposed by the mask pattern;
- forming a trench in the active region of the semiconductor substrate;
- and
- forming a recess gate in the trench.
Dependencies are inferred from the claim text.