Power Semiconductor Device

Abstract

Disclosed is a power semiconductor device capable of transmitting a gate signal from any upward, downward, leftward, and rightward directions on a plane to reduce deviation in the gate signal's transmission speed and impedance. The power semiconductor device includes a conductive low-density epitaxial layer; a first conductive region having a number of first conductive layers formed linearly on the surface of the epitaxial layer with predetermined spacing and depth and a number of second conductive layers formed linearly with a predetermined spacing while being spaced a predetermined distance from ends of the first conductive >layers; a second conducive region formed with a width and a depth smaller than those of the first and second conductive layers so that channels can be formed on the first and second conductive layers, respectively; gate oxide having a first window formed on the surface of the epitaxial layer with a width smaller than that of the first conductive layers and a second window formed with a width smaller than that of the second conductive layers; and gate polysilicon formed on the gate oxide.

Dependencies are inferred from the claim text.