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US 2008/0157186 A1Published application
Non-volatile memory device including metal-insulator transition material
AssigneeSamsung Electronics Co., Ltd.
InventorsWan-jun Park, Jo-won Lee, Sang-hun Jeon, Chung-woo Kim
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Abstract
A non-volatile memory device including a metal-insulator transition (MIT) material is provided. The non-volatile memory device includes a gate stack having a tunneling layer, a charge trap layer, a blocking layer and a gate electrode formed on a substrate, wherein at least one of the tunneling layer and the blocking layer is formed of an MIT (metal-insulator transition) material.
Claims18
A non-volatile memory device, comprising:
- a gate stack including a tunneling layer, a charge trap layer, a blocking layer and a gate electrode formed on a substrate, wherein at least one of the tunneling layer and the blocking layer includes a metal-insulator transition (MIT) material.
Dependencies are inferred from the claim text.