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US 2008/0157185 A1Published application
Non-Volatile Memory Device Having Charge Trapping Layer and Method for Fabricating the Same
AssigneeHynix Semiconductor Inc.
InventorsMoon Sig Joo, Seung Ho Pyi, Yong Soo Kim
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Abstract
A non-volatile memory device includes a substrate, a tunneling layer over the substrate, a charge trapping layer including a nitride layer and a silicon boron nitride layer over the tunneling layer, and a blocking layer over the charge trapping layer, and a control gate electrode arranged on the blocking layer.
Claims22
A non-volatile memory device comprising:
- a substrate;
- a tunneling layer over the substrate;
- a charge trapping layer comprising a nitride layer and a silicon boron nitride layer over the tunneling layer;
- a blocking layer over the charge trapping layer;
- and
- a control gate electrode over the blocking layer.
3 more elements
A non-volatile memory device comprising:
- a substrate;
- a tunneling layer over the substrate;
- a charge trapping layer comprising a first nitride layer, a silicon boron nitride layer, and a second nitride layer over the tunneling layer;
- a blocking layer over the charge trapping layer;
- and
- a control gate electrode arranged on the blocking layer.
3 more elements
A method for fabricating a non-volatile memory device comprising the steps of:
- forming a tunneling layer over a substrate;
- forming a nitride layer over the tunneling layer;
- forming a silicon boron nitride layer over the nitride layer;
- forming a blocking layer over the silicon boron nitride layer;
- and
- forming a control gate electrode over the blocking layer.
3 more elements
A method for fabricating a non-volatile memory device comprising the steps of:
- forming a tunneling layer over a substrate;
- forming a first nitride layer over the tunneling layer;
- forming a silicon boron nitride layer over the first nitride layer;
- forming a second nitride layer over the silicon boron nitride layer;
- forming a blocking layer over the second boron nitride layer;
- and
- forming a control gate electrode over the blocking layer.
4 more elements
Dependencies are inferred from the claim text.