Flash memory device and method of forming the device

An apparatus comprising:

• a plurality of cell gate patterns extending in a single direction and each having a first portion and a second portion formed over a semiconductor substrate including a first cell gate pattern, a second cell gate pattern adjacent to the first cell gate pattern, a third cell gate pattern adjacent to the second cell gate pattern and fourth cell gate pattern adjacent to the third cell gate pattern;
• and
• spacers formed on sidewalls of the first portions of the cell gate patterns,
• wherein the first portions of the second cell gate pattern and the third cell gate pattern are separated from each by a first distance and the second portions of the second cell gate pattern and the third cell gate pattern are separated from each other by a second distance less than the first distance.

A method comprising:

• forming a plurality of cell gate patterns each having a first portion and a second portion over a semiconductor substrate including a first cell gate pattern, a second cell gate pattern adjacent to the first cell gate pattern, a third cell gate pattern adjacent to the second cell gate pattern and fourth cell gate pattern adjacent to the third cell gate pattern;
• and then
• forming spacers formed on sidewalls of the first portions of the cell gate patterns,
• wherein the first portions of the second cell gate pattern and the third cell gate pattern are separated from each by a first distance, the second portions of the second cell gate pattern and the third cell gate pattern are separated from each other by a second distance which is less than the first distance, the first portions of the first cell gate pattern and the second cell gate pattern are separated from each other by a third distance that is at least one of equal to and less than the first distance, and the second portions of the first cell gate pattern and the second cell gate pattern are separated from each other by a fourth distance which is greater than the second distance.