Flash Memory Device and Method for Manufacturing Thereof
OwnerDae Young Kiminventor
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Abstract
A flash memory device and method of fabricating the same are provided. A flash memory device includes a tunnel insulating layer on a substrate, a floating gate on the tunnel insulating layer, and ONO layer on the floating gate, and a control gate formed oil the ONO layer. According to an embodiment, the ONO layer of a first oxide layer, a nitride layer, and a second oxide layer is formed from a single oxide film deposited on the floating gate. The nitride layer can be formed between the first oxide layer and the second oxide layer by nitriding a vertically intermediate region of the single oxide film.
Claims13
A flash memory device, comprising:
- a tunnel insulating layer on a substrate;
- a floating gate on the tunnel insulating layer;
- an ONO layer on the floating gate;
- and
- a control gate on the ONO layer;
- wherein the ONO layer comprises a first oxide film, a nitride film, and a second oxide film formed from a single oxide film, wherein the nitride film comprises a nitrided vertically intermediate region of the single oxide film.
A method of fabricating a flash memory device, comprising:
- forming a tunnel insulating layer on a substrate;
- forming a floating gate on the tunnel insulating layer;
- forming an oxide film on the floating gate;
- nitriding a vertically intermediate region of the oxide film;
- annealing the substrate to form an ONO layer from the oxide film having a nitrided vertically intermediate region;
- and
- forming a control gate on the ONO layer.
Dependencies are inferred from the claim text.