Flash memory device
AssigneeDongbu HiTek Co., Ltd.
InventorTae-Woong Jeong
Life of this patent
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Abstract
Embodiments relate to a flash memory device and to method of fabricating a flash memory device is disclosed. According to embodiments, a method may include forming a device isolation layer on a semiconductor substrate to define active regions, forming floating gate patterns on the active regions, forming the photoresist patterns on the device isolation layer such that the photoresist patterns have side walls higher than the floating gate patterns, forming spacer patterns at the side walls of the photoresist patterns such that the spacer patterns partially cover the floating gate patterns, and etching the floating gate patterns by a predetermined depth using the spacer patterns as an etching mask.
Claims17
A method, comprising:
- forming a device isolation layer over a semiconductor substrate to define active regions;
- forming floating gate patterns over active regions of the semiconductor substrate;
- forming photoresist patterns over the device isolation layer such that the photoresist patterns have side walls higher than that of the floating gate patterns;
- forming spacer patterns at the side walls of the photoresist patterns such that the spacer patterns partially cover the floating gate patterns;
- and
- etching the floating gate patterns by a predetermined depth using the spacer patterns as an etching mask.
A device, comprising:
- a device isolation layer over a semiconductor substrate defining active regions;
- floating gate patterns over active regions of the semiconductor substrate;
- and
- spacer patterns over outer edges of the floating gate patterns, wherein the floating gate patterns are etched to a predetermined depth using the spacer patterns as an etching mask.
Dependencies are inferred from the claim text.