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US 2008/0157165 A1Published application
Flash Memory Device and Method of Manufacturing the Same
AssigneeDongbu Hitech Co., Ltd.
InventorJIN HA PARK
Life of this patent
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Abstract
A flash memory device and a method of manufacturing a flash memory device are provided. The flash memory device includes a gate region on a semiconductor substrate, spacers on sidewalls of the gate region, and a passivation layer between the semiconductor substrate and a portion of each spacer.
Claims20
A flash memory device, comprising:
- a gate region on a semiconductor substrate;
- a spacer on each sidewall of the gate region;
- and
- a passivation layer on the semiconductor substrate and under at least a portion of each spacer.
1 more element
A method of manufacturing a flash memory device, comprising:
- forming a gate region on a semiconductor substrate;
- forming a first tetraethyl orthosilicate (TEOS) layer sidewall spacer on the gate region;
- forming an oxide layer on the semiconductor substrate;
- forming a silicon nitride (SiN) layer on the semiconductor substrate;
- patterning the oxide layer and the SiN layer to form a passivation layer and a SiN layer spacer.
2 more elements
Dependencies are inferred from the claim text.