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US 2008/0157130 A1Published application
Expitaxial fabrication of fins for FinFET devices
AssigneeIntel Corporation
InventorPeter L.D. Chang
Life of this patent
Estimating the term…
Abstract
A fin for a finFET is described. The fin is a portion of a layer of material, where, another portion of the layer of material resides on a sidewall.
Claims21
An article of manufacture, comprising:
- a fin for a FinFET, said fin being a portion of a layer of material, another portion of said layer of material residing on a sidewall.
A method, comprising:
- manufacturing a fin for a FinFET by:
- epitaxially forming a layer of material on a sidewall of a multilayer structure;
- and,
- forming said fin by etching a layer of said multilayer structure to expose opposite facing sides of said layer of material
1 more element
A method, comprising:
- manufacturing fins for a pair of FinFETs by:
- epitaxially forming a layer of material on opposite facing sidewalls of a multilayer structure;
- depositing a dielectric layer next to both of said opposite facing sides;
- etching a layer of said multilayer structure to expose facing sides of said layer of material;
- and,
- depositing a second dielectric layer between said facing sides
3 more elements
Dependencies are inferred from the claim text.