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US 2008/0157118 A1Published application
Integrated circuit system employing strained technology
AssigneesChartered Semiconductor Manufacturing Ltd., International Business Machines Corporation
InventorsJae Gon Lee, Lee Wee Teo, Seong-dong Kim
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Abstract
An integrated circuit system that includes: providing a substrate with a PMOS device and an NMOS device; forming an NMOS shallow recess within the substrate; forming a PMOS recess within the substrate; forming a strain inducing layer over the PMOS recess; forming a first dielectric layer over the NMOS device and a second dielectric layer over the PMOS device.
Claims20
An integrated circuit system comprising:
- providing a substrate with a PMOS device and an NMOS device;
- forming an NMOS shallow recess within the substrate;
- forming a PMOS recess within the substrate;
- forming a strain inducing layer over the PMOS recess;
- and
- forming a first dielectric layer over the NMOS device and a second dielectric layer over the PMOS device.
3 more elements
An integrated circuit system comprising:
- providing a substrate with a PMOS device and an NMOS device;
- forming a PMOS shallow recess and an NMOS shallow recess;
- forming a PMOS recess adjacent the PMOS shallow recess;
- forming a strain inducing layer over the PMOS recess and the PMOS shallow recess;
- and
- forming a first dielectric layer over the NMOS device and a second dielectric layer over the PMOS device.
3 more elements
An integrated circuit system comprising:
- a substrate with a PMOS device and an NMOS device;
- an NMOS shallow recess within the substrate;
- a PMOS recess within the substrate;
- a strain inducing layer over the PMOS recess;
- and
- a first dielectric layer over the NMOS device and a second dielectric layer over the PMOS device.
3 more elements
Dependencies are inferred from the claim text.