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US 2008/0157062 A1Published application
Spin transistor
AssigneeTDK Corporation
InventorTakashi Asatani
Life of this patent
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Abstract
A spin transistor 1 is a spin transistor 1 having a source S of a ferromagnetic material, a drain D of a ferromagnetic material, a semiconductor SM on which the source S and the drain D are disposed and which forms a Schottky contact with the source S, and a gate electrode GE disposed through a gate insulating layer GI on the semiconductor SM, wherein a tunnel barrier insulating layer TI constituting a tunnel barrier is interposed between the semiconductor SM and the drain D.
Claims5
A spin transistor comprising:
- a source of a ferromagnetic material;
- a drain of a ferromagnetic material;
- a semiconductor on which the source and the drain are disposed and which forms a Schottky contact with the source;
- and
- a gate electrode disposed directly or through a gate insulating layer on the semiconductor,
- wherein a tunnel barrier insulating layer constituting a tunnel barrier is interposed between the semiconductor and the drain.
3 more elements
Dependencies are inferred from the claim text.