End point detection method applying resonance phenomenon, end point detection apparatus, chemical mechanical polishing apparatus on which the detection apparatus is loaded, and semiconductor device fabricated by the chemical mechanical polishing apparatus

Abstract

To provide an end point detection method applying a resonance phenomenon, an end point detection apparatus, and a chemical mechanical polishing apparatus on which the detection apparatus is loaded for monitoring variation in the thickness of an electrically conductive film in real time, reliably detecting a polishing end point of the electrically conductive film at high accuracy, without generating noise, low power consumption, and capable of reducing the cost. In order to achieve above described objects, the present invention provides an end point detection method applying a resonance phenomenon in which a polishing end point is detected when the electrically conductive film is polished and removed to an appropriate thickness, wherein a sensor 37 composed of an oscillation circuit of the Colpitts type or the like having a planar inductor and a concentrated constant capacitor is used, and the variation in the thickness of the electrically conductive film is monitored in real time from the variation in the oscillation frequency of the sensor 37 caused along with the variation in the thickness of the electrically conductive film opposed to the planar inductor.

Dependencies are inferred from the claim text.