On die thermal sensor
AssigneeHynix Semiconductor Inc.
InventorsChun-Seok Jeong, Kee-Teok Park
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Abstract
An on die thermal sensor (ODTS) for use in a semiconductor memory device includes: a temperature information code generation unit for sensing an internal temperature of the semiconductor memory device in response to first and second enable signals and for generating a temperature information code which includes the sensed temperature information; and a flag signal logic determination unit for generating a plurality of first flag signals having temperature information and determining whether the plurality of first flag signals have a predetermined logic level or a variable logic level in response to the first and second enable signals.
Claims25
An on die thermal sensor (ODTS) for use in a semiconductor memory device, comprising:
- a temperature information code generation unit for sensing an internal temperature of the semiconductor memory device in response to first and second enable signals and for generating a temperature information code including the sensed temperature information;
- and
- a flag signal logic determination unit for generating a plurality of first flag signals having temperature information and for determining whether the plurality of first flag signals have a predetermined logic level or a variable logic level in response to the first and second enable signals.
A semiconductor memory device, comprising:
- a temperature information code generation unit for sensing an internal temperature of the semiconductor memory device at an on state in response to first and second enable signals and generating a temperature information code including the sensed temperature information;
- a flag signal logic determination unit for generating a plurality of first flag signals having temperature information, and determining whether the plurality of first flag signals have a predetermined logic level or a variable logic level in response to the first and second enable signals;
- and
- a self refresh period change unit for changing a period of a self refresh operation at a self refresh mode in response to the plurality of first flag signals.
Dependencies are inferred from the claim text.