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US 2008/0076261 A1Published application
Method of manufacturing semiconductor device, apparatus of manufacturing semiconductor device and semiconductor device
AssigneeKabushiki Kaisha Toshiba
InventorsHiroshi Katsumata, Katsuaki Aoki
Life of this patent
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Abstract
A method of manufacturing a semiconductor device includes: etching a first film provided on a wafer in a chamber; removing at least part of reaction products deposited on a component in the chamber facing the wafer by the etching to cause a distribution state of the deposited reaction products to get closer to a uniform state; and then etching a second film provided on the wafer in the chamber.
Claims24
A method of manufacturing a semiconductor device comprising:
- etching a first film provided on a wafer in a chamber;
- removing at least part of reaction products deposited on a component in the chamber facing the wafer by the etching to cause a distribution state of the deposited reaction products to get closer to a uniform state;
- and
- then etching a second film provided on the wafer in the chamber.
1 more element
A method of manufacturing a semiconductor device comprising:
- etching a first film provided on a wafer in a chamber;
- removing at least part of reaction products deposited in the chamber by the etching;
- and
- etching a second film provided under the first film on the wafer,
- information regarding an amount of the reaction products deposited in the chamber being obtained in at least one of etching the first film, removing the reaction products and etching the second film, and
- a feedback being conducted to at least one of etching the first film, removing the reaction products and etching the second film in regard to a next wafer, based on the information.
3 more elements
A method of manufacturing a semiconductor device comprising:
- etching a first film provided on a wafer placed in a chamber;
- removing at least part of reaction products deposited in the chamber by the etching;
- etching a second film provided under the first film on the wafer;
- and
- etching a third film provided under the second film on the wafer,
- information regarding an amount of the reaction products deposited in the chamber being obtained in at least one of etching the first film, removing the reaction products and etching the second film, and
- a feedforward being conducted to etching the third film.
4 more elements
A method of manufacturing a semiconductor device comprising:
- etching a first film provided on a wafer to form a pattern in a chamber;
- and
- adjusting size of the pattern using radicals generated from reaction products, when a mask left on the pattern is removed, the reaction products having been deposited on a component in the chamber facing the wafer by the etching.
A method of manufacturing a semiconductor device comprising:
- etching a film provided on a wafer in a chamber;
- and
- removing at least part of reaction products deposited on a component in the chamber facing the wafer to cause a distribution state of the deposited reaction products to get closer to a uniform state after the wafer has been carried out of the chamber.
An apparatus of manufacturing a semiconductor device comprising:
- a chamber configured to contain a wafer;
- an exhausting system configured to exhaust air from the chamber;
- a gas supply system configured to supply the chamber with a gas;
- a high frequency power supply configured to form a plasma of the gas in the chamber;
- a wafer carrying section configured to carry the wafer into the chamber;
- a measuring section configured to acquire information about a reaction product accumulated in the chamber;
- and
- a control section configured to control operation of the exhausting system, gas supply system, high frequency power supply and the wafer carrying section,
- the control section being capable to conduct steps of:
- bringing the wafer carrying section into carrying the wafer into the chamber,
- bringing the exhausting system, the gas supply system and the high frequency power supply into etching a first film provided on a first wafer placed in a chamber;
- bringing the exhausting system, the gas supply system and the high frequency power supply into removing at least part of reaction products deposited in the chamber by the etching;
- and
- bringing the exhausting system, the gas supply system and the high frequency power supply into etching a second film provided under the first film on the first wafer,
- information regarding an amount of the reaction products deposited in the chamber being obtained by the measuring section in at least one of etching the first film, removing the reaction products and etching the second film, and
- a feedback being conducted to at least one of etching the first film, removing the reaction products and etching the second film in regard to a next wafer.
13 more elements
An apparatus of manufacturing a semiconductor device comprising:
- a chamber configured to contain a wafer;
- an exhausting system configured to exhaust air from the chamber;
- a gas supply system configured to supply the chamber with a gas;
- a high frequency power supply configured to form a plasma of the gas in the chamber;
- a wafer carrying section configured to carry the wafer into the chamber;
- a measuring section configured to acquire information about a reaction product accumulated in the chamber;
- and
- a control section configured to control operation of the exhausting system, gas supply system, high frequency power supply and the wafer carrying section,
- the control section being capable to conduct steps of:
- bringing the wafer carrying section into carrying the wafer into the chamber,
- bringing the exhausting system, the gas supply system and the high frequency power supply into etching a first film provided on the wafer placed in the chamber;
- bringing the exhausting system, the gas supply system and the high frequency power supply into removing at least part of reaction products deposited in the chamber by the etching;
- bringing the exhausting system, the gas supply system and the high frequency power supply into etching a second film provided under the first film on the wafer;
- and
- bringing the exhausting system, the gas supply system and the high frequency power supply into etching a third film provided under the second film on the wafer,
- information regarding an amount of the reaction products deposited in the chamber being obtained by the measuring section in at least any of etching the first film, removing the reaction products and etching the second film, and
- a feedforward being conducted to etching the third film.
14 more elements
A semiconductor device manufactured using a method comprising:
- etching a first film provided on a wafer in a chamber;
- removing at least part of reaction products deposited on a component in the chamber facing the wafer by the etching to cause a distribution state of the deposited reaction products to get closer to a uniform state;
- and
- then etching a second film provided on the wafer in the chamber.
1 more element
A semiconductor device manufactured using a method comprising:
- etching a first film provided on a wafer in a chamber;
- removing at least part of reaction products deposited in the chamber by the etching;
- and
- etching a second film provided under the first film on the wafer,
- information regarding an amount of the reaction products deposited in the chamber being obtained in at least one of etching the first film, removing the reaction products and etching the second film, and
- a feedback being conducted to at least one of etching the first film, removing the reaction products and etching the second film in regard to a next wafer, based on the information.
3 more elements
A semiconductor device manufactured using a method comprising:
- etching a first film provided on a wafer placed in a chamber;
- removing at least part of reaction products deposited in the chamber by the etching;
- etching a second film provided under the first film on the wafer;
- and
- etching a third film provided under the second film on the wafer,
- information regarding an amount of the reaction products deposited in the chamber being obtained in at least one of etching the first film, removing the reaction products and etching the second film, and
- a feedforward being conducted to etching the third film.
4 more elements
A semiconductor device manufactured using a method comprising:
- etching a first film provided on a wafer to form a pattern in a chamber;
- and
- adjusting size of the pattern using radicals generated from reaction products, when a mask left on the pattern is removed, the reaction products having been deposited on a component in the chamber facing the wafer by the etching.
Dependencies are inferred from the claim text.