Separation-material composition for photo-resist and manufacturing method of semiconductor device

A manufacturing method of a semiconductor device comprising:

• a process for forming a photo-resist mask having a photo-resist pattern on an under-layer and for processing said under-layer subsequently by using said photo-resist mask, and
• an ashing process for ashing processing so as to remove said photo-resist mask, and
• a washing process for washing processing said processed under-layer by using a separation-material composition for a photo-resist such that at least one of said photo-resist mask residuals and the by-product polymer residuals is separated and removed,
• wherein a separation-material composition for a photo-resist which includes at least sulfamic acid (NH2SO3H) and water is used as said separation-material composition for the photo-resist.

A manufacturing method of a semiconductor device comprising:

• a process for film-making a hard mask forming layer on an under-layer;
• a process for forming a photo-resist mask having a photo-resist pattern on said hard mask forming layer, for subsequently etching said hard mask forming layer by using said photo-resist mask and for forming a hard mask transferred with said photo-resist pattern;
• a process for subsequently processing said under-layer by using said hard mask;
• and
• a washing process for washing processing said processed under-layer by using a separation-material composition for a photo-resist such that at least one of said photo-resist mask residuals and the by-product polymer is separated and removed;
• wherein a separation-material composition for a photo-resist which includes at least sulfamic acid (NH2SO3H) and water is used as said separation-material composition for the photo-resist.

A manufacturing method of a semiconductor device comprising:

• a process for forming a photo-resist mask having a photo-resist pattern on an under-layer and for processing said under-layer subsequently by using said photo-resist mask, and
• an ashing process for ashing processing so as to remove said photo-resist mask, and
• a washing process for washing processing said processed under-layer by using a separation-material composition for a photo-resist such that at least one of said photo-resist mask residuals and the by-product polymer residuals is separated and removed,
• wherein a separation-material composition for a photo-resist which is a water solution including at least phosphonic acid (H2PHO3) and a water-soluble organic solvent is used as said separation-material composition for the photo-resist.

A manufacturing method of a semiconductor device comprising:

• a process for film-making a hard mask forming layer on an under-layer;
• a process for forming a photo-resist mask having a photo-resist pattern on said hard mask forming layer, for subsequently etching said hard mask forming layer by using said photo-resist pattern and for forming a hard mask transferred with said photo-resist pattern;
• a process for subsequently processing said under-layer by using said hard mask;
• and
• a washing process for washing processing said processed under-layer by using a separation-material composition for a photo-resist such that at least one of said photo-resist mask residuals and the by-product polymer is separated and removed;
• wherein a separation-material composition for a photo-resist which is a water solution including at least phosphonic acid (H2PHO3) and a water-soluble organic solvent is used as said separation-material composition for the photo-resist.