Mask pattern for semiconductor device fabrication, method of forming the same, method for preparing coating, composition for fine pattern formation, and method of fabricating semiconductor device
AssigneeSamsung Electronics Co., Ltd.
InventorsMitsuhiro Hata, Jung-Hwan Hah, Hyun-Woo Kim, Sang-Gyun Woo
Life of this patent
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Abstract
A mask pattern for semiconductor device fabrication comprises a resist pattern formed on a semiconductor substrate, and an interpolymer complex film formed on the resist pattern, wherein the interpolymer complex film includes a network formed by a hydrogen bond between a proton donor polymer and a proton acceptor polymer.
Claims62
A mask pattern for semiconductor device fabrication, which comprises:
- a resist pattern formed on a semiconductor substrate;
- and
- an interpolymer complex film formed on the resist pattern, wherein the interpolymer complex film includes a network formed by a hydrogen bond between a proton donor polymer and a proton acceptor polymer.
A method of forming a mask pattern for semiconductor device fabrication, which comprises:
- forming a resist pattern on a semiconductor substrate;
- contacting a coating composition comprising a proton donor polymer and a proton acceptor polymer with a surface of the resist pattern;
- and
- forming a water-insoluble interpolymer complex film on the surface of the resist pattern.
A method for preparing a coating composition for fine pattern formation, which comprises:
- preparing a first solution comprising a proton acceptor polymer and a first solvent;
- preparing a second solution comprising a proton donor polymer and a second solvent;
- and
- preparing a mixed solution of the first solution and the second solution.
A method of fabricating a semiconductor device, which comprises:
- forming an underlayer on a semiconductor substrate;
- forming a resist pattern with openings through which the underlayer is exposed to a first width;
- forming a water-insoluble interpolymer complex film on a surface of the resist pattern by heating the semiconductor substrate in a state wherein a coating composition comprising a proton donor polymer and a proton acceptor polymer contacts with the surface of the resist pattern, to expose the underlayer through the openings to a second width being smaller than the first width;
- and
- etching the underlayer using the resist pattern and the interpolymer complex film as an etching mask.
Dependencies are inferred from the claim text.