Resist composition, resist pattern forming process, and method for manufacturing semiconductor device

A method for manufacturing a semiconductor device, comprising:

• forming a resist pattern over a work surface by means of a resist pattern forming process;
• and
• patterning the work surface by etching using the resist pattern as a mask,
• wherein the resist pattern forming process comprises applying a resist composition over the work surface, heating the resist composition to form a resist film over the work surface, selectively irradiating the resist film with ionized radiation, heating the resist film that has been irradiated with the ionized radiation, and developing the resist film,
• wherein the resist composition comprises a base resin, a photoacid generator, a first additive, and a second additive,
• wherein the pKa of the second additive is higher than the pKa of the first additive, and at a resist formation temperature, the vapor pressure of the second additive is lower than the vapor pressure of the first additive.