Method of forming metal lines and bumps for semiconductor devices

A method of forming conductors, comprising:

• forming first and second seed metal layers on a front surface of a semiconductor chip;
• forming at least one mask on portions of the first seed metal layer on which the conductors are to be formed to expose portions of the first seed metal layer on which the conductors are not to be formed;
• oxidizing the exposed portions of the first seed metal layer to form a metal oxide;
• removing the at least one mask;
• plating a metal on a surface of the first seed metal layer exposed by removing the at least one mask to form the conductors;
• and
• removing the portions of the second seed metal layer on which the conductors are not formed.