Buffer layers for device isolation of devices grown on silicon

A method comprising:

• growing a buffer layer comprising AlSb over an offcut silicon substrate;
• growing a bottom barrier layer over the buffer layer;
• growing a quantum well layer over the bottom barrier layer;
• growing a top barrier layer over the quantum well layer;
• and
• forming an InSb-based device over the quantum well layer.

An apparatus comprising:

• one or more processors;
• and
• one or more components operably coupled with said one or more processors, said one or more components comprising:
• an offcut silicon substrate having a first lattice spacing;
• a buffer layer comprising a III-V material disposed over the offcut silicon substrate, the buffer layer having a second lattice spacing larger than the first lattice spacing;
• and
• a device formed relative to a III-V material device layer disposed over and supported by the buffer layer, the III-V material device layer having a third lattice spacing larger than the second lattice spacing.