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US 2008/0076228 A1Published application
Bipolar device having buried contacts
AssigneeAgere Systems Inc.
InventorsMark Dyson, Daniel C. Kerr, Nace M. Rossi
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Abstract
The invention, in one aspect, provides a semiconductor device that includes a collector for a bipolar transistor located within a semiconductor substrate and a buried contact, at least a portion of which is located in the collector to a depth sufficient that adequately contacts the collector.
Claims21
A method of manufacturing a semiconductor device, comprising:
- forming a collector for a bipolar transistor within a semiconductor substrate;
- and
- forming a buried contact in the collector to a depth sufficient to adequately contact the collector.
A semiconductor device, comprising:
- a collector for a bipolar transistor located within a semiconductor substrate;
- and
- a buried contact, at least a portion of which is located in the collector to a depth sufficient to adequately contact the collector.
A semiconductor device, comprising:
- a collector for a vertical bipolar transistor located within a semiconductor substrate;
- a base located within the collector;
- an emitter located over the base;
- and
- a buried contact, at least a portion of which is located in the collector to a depth sufficient to adequately contact the collector.
2 more elements
Dependencies are inferred from the claim text.