Method for forming a pre-metal dielectric layer using an energy beam treatment

A method for manufacturing an integrated circuit, comprising:

• forming one or more gate structures over a substrate, the gate structures having source/drain regions proximate thereto and in, on or over the substrate;
• forming a pre-metal dielectric layer over the one or more gate structures and source/drain regions;
• subjecting the pre-metal dielectric layer to an energy beam treatment, the energy beam treatment configured to change a stress of the pre-metal dielectric layer, and thus change a stress in the substrate therebelow;
• and
• forming contacts within the pre-metal dielectric layer, the contacts configured to contact the gate structures or source/drain regions.

A semiconductor device, comprising:

• a semiconductor substrate;
• a gate structure located over the substrate;
• source/drain regions located in, on or over the substrate, and having a channel region located therebetween;
• and
• a pre-metal dielectric layer located over the gate structure, the pre-metal dielectric layer subjected to an energy beam treatment to impart a stress in the channel region.