Rework methodology that preserves gate performance
AssigneeTexas Instruments Incorporated
InventorsYaw Samuel Obeng, Yu-Tai Lee, Rajesh Khamankar, April Gurba, Brian Kirkpatrick, Ajith Varghese
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AssigneeTexas Instruments Incorporated
InventorsYaw Samuel Obeng, Yu-Tai Lee, Rajesh Khamankar, April Gurba, Brian Kirkpatrick, Ajith Varghese
Estimating the term…
In one embodiment, a method of manufacturing an integrated circuit that comprises forming a circuit layer over a substrate, forming a resist layer on the circuit layer, and subjecting the resist layer to a rework process that includes exposing the resist layer to an organic wash. In another embodiment, the method of manufacturing an integrated circuit comprises forming a circuit layer over a substrate, forming a priming layer on the circuit layer, and subjecting the resist layer to the rework process. The reworking process includes exposing the substrate to a mild plasma ash to substantially remove portions of the resist layer but leave the priming layer.
A method of manufacturing an integrated circuit, comprising:
A method of manufacturing a semiconductor device, comprising:
An integrated circuit, comprising:
An integrated circuit, comprising:
Dependencies are inferred from the claim text.