Method of creating photolithographic structures with developer-trimmed hard mask

A method of forming a microelectronic structure, said method comprising applying a first composition to a microelectronic substrate or to an intermediate layer on said microelectronic substrate to form a hard mask layer thereon, said first composition comprising:

• where:
• M is selected from the group consisting of Ti and Zr;
• and each R is individually selected from the group consisting of hydrogen, and alkyls;
• (B) a compound comprising at least one —OH group;
• (C) a crosslinking agent;
• and
• (D) a solvent system, wherein (A), (B), and (C) are dissolved or dispersed in said solvent system.

A microelectronic structure comprising:

• a microelectronic substrate having a surface, said substrate having an etch rate;
• and
• a T-shaped structure on said substrate surface, or on an intermediate layer on said substrate surface, said T-shaped structure comprising:
• an upright leg comprising a hard mask having an etch rate, said leg having upper and lower portions joined by opposing vertical sidewalls that are generally perpendicular to said substrate surface, said lower portion contacting said substrate surface or intermediate layer;
• and
• a generally horizontal section comprising an imaging layer and being:
• adjacent said upper portion or an intermediate layer on said upper portion;
• and
• generally perpendicular to said vertical sidewalls, wherein said hard mask etch rate is at least about 3 times said substrate etch rate.

A microelectronic structure comprising:

• a microelectronic substrate having a surface;
• and
• a T-shaped structure on said substrate surface, or on an intermediate layer on said substrate surface, said T-shaped stricture comprising:
• an upright leg having upper and lower portions joined by opposing vertical sidewalls, said lower portion contacting said substrate surface or intermediate layer, and said vertical sidewalls and substrate surface forming an angle of from about 80° to about 100°;
• and
• a generally horizontal section being:
• adjacent said upper portion or an intermediate layer on said upper portion;
• and
• generally perpendicular to said vertical sidewalls.

A method of forming a microelectronic stricture, said method comprising:

• providing a microelectronic substrate having a surface, and optionally one or more intermediate layers on said surface, said substrate having an etch rate;
• applying a hard mask composition to said substrate surface, or to an intermediate layer on said substrate surface, to form a hard mask layer thereon, said hard mask layer having all etch rate, wherein said hard mask etch rate is at least about 3 times said substrate etch rate;
• optionally forming one or more intermediate layers on said hard mask layer;
• forming an imaging layer on said hard mask layer, or on intermediate layers on said hard mask;
• exposing said imaging layer to light to yield light-exposed portions of the imaging layer;
• developing said imaging layer after light exposure so as to remove said light-exposed portions, and portions of said hard mask layer adjacent said light-exposed portions, wherein said developing yields a T-shaped structure on said substrate surface, or on an intermediate layer on said substrate surface, said T-shaped structure comprising:
• an upright leg having upper and lower portions joined by opposing vertical sidewalls that are generally perpendicular to said substrate surface, said lower portion contacting said substrate surface or intermediate layer;
• and
• a generally horizontal section being:
• adjacent said upper portion or an intermediate layer on said upper portion;
• and
• generally perpendicular to said vertical sidewalls.

A method of forming a microelectronic structure, said method comprising:

• providing a microelectronic substrate having a surface, and optionally one or more intermediate layers on said surface,
• applying a hard mask composition to said substrate surface, or to an intermediate layer on said substrate surface, to form a hard mask layer thereon;
• optionally forming one or more intermediate layers on said hard mask layer;
• forming an imaging layer on said hard mask layer, or on intermediate layers on said hard mask;
• exposing said imaging layer to light to form light-exposed portions of the imaging layer;
• developing said imaging layer after light exposure so as to remove said light-exposed portions, and portions of said hard mask layer adjacent said light-exposed portions, wherein said developing yields a T-shaped structure on said substrate surface, or on an intermediate layer on said substrate surface, said T-shaped structure comprising:
• an upright leg having upper and lower portions joined by opposing vertical sidewalls that are generally perpendicular to said substrate surface, said lower portion contacting said substrate surface or intermediate layer and said vertical sidewalls and substrate surface forming an angle of from about 80° to about 100°;
• and
• a generally horizontal section being:
• adjacent said upper portion or an intermediate layer on said upper portion;
• and
• generally perpendicular to said vertical sidewalls.