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US 2008/0075880 A1Published application
Non-doping implantation process utilizing a plasma ion implantation system
OwnerAnthony Renau, Vikram Singhinventors
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Abstract
Non-doping implantation process utilizing a plasma ion implantation system. A plasma ion implantation system is used to perform a non-doping implantation process such as a pre-amorphization implantation process or a strain altering implantation. Use of the plasma ion implantation system to perform a non-doping implantation process results in higher throughput and is conducive to sequential ion implantation processing.
Claims14
A method for plasma ion implantation of a substrate, comprising:
- providing a plasma ion implantation system including a process chamber, a source for supplying a process gas into the process chamber, a platen for holding the substrate in the process chamber, a radio frequency energy source for generating plasma in the process chamber and a voltage source for accelerating ions from the plasma into the substrate;
- and
- performing a non-doping implantation of the substrate with the plasma ion implantation system according to a first implant process having a dose rate.
A method for plasma ion implantation of a substrate, comprising:
- providing a plasma ion implantation system including a process chamber, a source for supplying a process gas into the process chamber, a platen for holding the substrate in the process chamber, a radio frequency energy source for generating plasma in the process chamber and a voltage source for accelerating ions from the plasma into the substrate;
- performing a non-doping implantation of the substrate with the plasma ion implantation system according to a first implant process having a dose rate;
- and
- performing a plasma ion implantation on the non-doped implanted substrate with the plasma ion implantation system according to a second implant process having a dose rate.
1 more element
A method for plasma ion implantation of a substrate, comprising:
- providing a plasma ion implantation system including a process chamber, a source for supplying a process gas into the process chamber, a platen for holding the substrate in the process chamber, a radio frequency energy source for generating plasma in the process chamber and a voltage source for accelerating ions from the plasma into the substrate;
- performing a non-doping implantation of the substrate with the plasma ion implantation system according to a first implant process having a dose rate, wherein the non-doping implantation of the substrate comprises at least one of the following:
- a pre-amorphization implantation or a strain altering implantation;
- and
- sequentially performing a plasma ion implantation on the non-doped implanted substrate with the plasma ion implantation system according to a second implant process having a dose rate.
2 more elements
Dependencies are inferred from the claim text.