Ald apparatus and method for depositing multiple layers using the same

An atomic layer deposition (ALD) apparatus configured for depositing multiple layers on multiple substrates, comprising:

• a first reaction space in selective communication with a first ALD reactant;
• a second reaction space in selective communication with a second ALD reactant;
• a third reaction space in selective communication with a third ALD reactant;
• a fourth reaction space in selective communication with a fourth ALD reactant;
• a driver configured to move a plurality of substrates through the first, second, third and fourth reaction chambers;
• and
• a controller connected to gas control systems and the driver, the controller configured to conduct a first ALD process on the substrates using the first and third ALD reactants and to conduct a second ALD process on the substrates using the second and fourth ALD reactants while the driver moves the substrates through the first, second, third and fourth reaction chambers.

A method of forming thin films on a plurality of substrates, the method comprising:

• providing a plurality of reaction spaces including a first set of reaction spaces and a second set of reaction spaces;
• loading a plurality of substrates into the reaction spaces such that each of the reaction spaces is loaded with at least one of the substrates;
• supplying a first set of reactant vapors for a first ALD process into the first set of reaction spaces during a first period of time, wherein each of the first set of reactant vapors is supplied to a separate one of the first set of reaction spaces;
• moving the substrates through the first set of reaction spaces for two or more complete cycles during the first period of time to thereby deposit a first film on the substrates;
• supplying a second set of reactant vapors for a second ALD process into the second set of reaction spaces during a second period of time, wherein each of the second set of reactant vapors is supplied to a separate one of the second set of reaction spaces;
• and
• moving the substrates through the second set of reaction spaces for two or more complete cycles during the second period of time to thereby deposit a second film on the substrates.

A method of depositing a plurality of thin films on a substrate, the method comprising:

• conducting a first atomic layer deposition (ALD) of a first thin film on the substrate during a first period of time, the first ALD comprising:
• supplying at least first and second ALD reactants into first and third reaction spaces, respectively,
• supplying purge gas into second and fourth reaction spaces, and
• moving the substrate through the first, second, third and fourth reaction spaces in at least two cycles;
• and
• subsequently conducting a second atomic layer deposition (ALD) of a second thin film on the substrate during a second period of time, the second ALD comprising:
• supplying at least third and fourth ALD reactants into the second and fourth reaction spaces, respectively,
• supplying purge gas into the first and second reaction spaces, and
• moving the substrate through the first, second, third and fourth reaction spaces in at least two cycles.