Method of Forming a Phase-Change Memory Unit and Method of Manufacturing a Phase-Change Memory Device Using the Same

A method of manufacturing a phase-change memory unit, comprising:

• forming a contact region on a substrate;
• forming a lower electrode electrically connected to the contact region;
• forming a preliminary phase-change material layer on the lower electrode using a chalcogenide compound doped with carbon, or carbon and nitrogen;
• forming an upper electrode on the preliminary phase-change material layer;
• and
• changing the preliminary phase-change material layer into a phase-change material layer by doping a stabilizing metal into the preliminary phase-change material layer.

A method of manufacturing a memory device, comprising:

• forming a contact region on a substrate;
• forming a switching device electrically connected to the contact region;
• forming an insulation layer on the substrate;
• forming a lower electrode on the insulation layer, wherein the lower electrode is electrically connected to the contact region;
• forming a preliminary phase-change material layer on the lower electrode using a chalcogenide compound doped with carbon, or carbon and nitrogen;
• forming a phase-change material layer on the lower electrode by doping a stabilizing metal into the preliminary phase-change material layer;
• and
• forming an upper electrode on the phase-change material layer.

A method of manufacturing a memory device, comprising:

• forming a contact region on a substrate;
• forming a switching device electrically connected to the contact region;
• forming an insulation layer on the substrate;
• forming a lower electrode on the insulation layer, wherein the lower electrode is electrically connected to the contact region;
• forming a preliminary phase change material layer on the lower electrode using a chalcogenide compound doped with carbon or a chalcogenide compound doped with carbon and nitrogen;
• forming an upper electrode on the preliminary phase-change material layer;
• and
• changing the preliminary phase-change material layer into a phase-change material layer by doping a stabilizing metal into the preliminary phase-change material layer.