Oxidation apparatus and method for semiconductor process

An oxidation method for a semiconductor process, the method comprising:

• placing a plurality of target substrates at intervals in a vertical direction within a process field of a process container;
• respectively supplying an oxidizing gas and a deoxidizing gas to the process field, while heating the process field;
• causing the oxidizing gas and the deoxidizing gas to react with each other, thereby generating oxygen radicals and hydroxyl group radicals within the process field;
• and
• performing an oxidation process on a surface of the target substrates by use of the oxygen radicals and the hydroxyl group radicals,
• wherein the oxidizing gas is supplied from an oxidizing gas nozzle extending over a vertical length corresponding to the process field, and having a plurality of gas spouting holes arrayed over the vertical length corresponding to the process field, and
• the deoxidizing gas is supplied from a plurality of deoxidizing gas nozzles having different heights respectively corresponding to a plurality of zones of the process field arrayed vertically, and each having a gas spouting hole formed at height of a corresponding zone.