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US 2008/0075834 A1Published application
Dosimetry using optical emission spectroscopy/residual gas analyzer in conjuntion with ion current
AssigneeApplied Materials, Inc.
InventorsKartik Ramaswamy, Seon-Mee Cho, Tsutomu Tanaka, Majeed A. Foad
Life of this patent
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Abstract
The present invention generally provides methods and apparatus for controlling ion dosage in real time during plasma processes. In one embodiment, ion dosages may be controlled using in-situ measurement of the plasma from a mass distribution sensor combined with in-situ measurement from an RF probe.
Claims20
A method for processing a substrate, comprising:
- positioning the substrate in a plasma reactor configured to perform a plasma process;
- generating a plasma in the plasma reactor to start the plasma process by supplying a RF bias to the plasma reactor;
- obtaining a value of the at least one attribute of the plasma using a first sensor configured to monitor at least one attribute of a plasma generated in the plasma reactor;
- obtaining a value of the at least one attribute of the RF bias power using a second sensor configured to monitor at least one attribute of a RF bias power configured to supply the RF bias to the plasma reactor;
- and
- determining a real time dose value of one or more ion species in the plasma from the value of the at least one attribute of the plasma and the value of the at least on attribute of the RF bias power.
3 more elements
An apparatus for processing a substrate, comprising:
- a process chamber defining a process volume;
- a conductive support pedestal positioned in the process volume;
- a gas distribution assembly connected to a gas panel and positioned parallel the conductive support pedestal, wherein an RF plasma bias power supply is coupled between the gas distribution assembly and the conductive support pedestal;
- a first sensor configured to monitor one or more attributes of a plasma generated in the process volume;
- a second sensor configured to monitor one or more attribute of the RF plasma bias power supply;
- and
- a controller coupled to the first and second sensors, wherein the controller is configured to receive and analyze signals from the first and second sensors.
4 more elements
A method for implanting a desired dose of a material into a substrate, comprising:
- positioning the substrate in a plasma reactor having a RF bias power configured to generate a plasma in the plasma reactor;
- generating a plasma comprising the material in the plasma reactor using the RF bias power;
- obtaining a value of the attribute of the material in the plasma using a first sensor configured to monitor an attribute of the plasma in the plasma reactor;
- obtaining a value of the at least one attribute of the RF bias power using a second sensor configured to monitor at least one attribute of the RF bias power;
- determining a real time dosage value of the material using the value of the attribute of the material and the value of the at least one attribute of the RF bias power;
- and
- terminating the plasma when the real time dosage value is within an error range of the desired dose.
4 more elements
Dependencies are inferred from the claim text.