Method of identifying crystal defect region in monocrystalline silicon using metal contamination and heat treatment

A method of identifying a crystal defect region, comprising:

• preparing a sample in the shape of a silicon wafer or a slice of monocrystalline silicon ingot;
• contaminating at least one side of the sample by applying a Cu-contaminated solution, which is a mixture of copper and a buffered oxide etchant (BOE) solution, onto at least one side of the sample, and drying the contaminated sample;
• heat-treating the dried sample;
• and
• observing the contaminated side or the opposite side of the heat-treated sample to identify a crystal defect region.

A method of identifying a crystal defect region, comprising:

• selectively-etching one side of a sample in the shape of a silicon wafer or a slice of monocrystalline silicon ingot, and observing the resulting structure with a microscope to identify a crystal defect region primarily;
• removing the selectively etched portion from the one side of the sample;
• contaminating at least one side of the sample with metal;
• heat-treating the contaminated sample;
• and
• observing the contaminated side or the opposite side of the heat-treated sample with the naked eye to identify a crystal defect region secondarily.

A method of identifying a crystal defect region, comprising:

• preparing first and second samples in the shape of two silicon wafers or slices that are sampled from adjacent positions in a monocrystalline silicon ingot;
• selectively etching one side of the first sample and observing the resulting structure with a microscope;
• contaminating at least one side of the second sample with metal;
• heat-treating the contaminated second sample;
• and
• observing the contaminated side or the opposite side of the heat-treated second sample with the naked eye,
• wherein the results of the observation/measurement of the first and second samples are synthesized to identify a crystal defect region of the monocrystalline silicon ingot.