Cpp spin valve with long spin diffusion length ap1 layers
AssigneeHitachi Global Storage Technologies
InventorsMatthew Carey, Shekar Chandrashekariaih, Stefan Maat, Jeffrey Childress
Life of this patent
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Abstract
A magnetoresistive sensor having a pinned layer that includes a first magnetic layer (AP1) a second magnetic layer (AP2) and an antiparallel coupling layer sandwiched between the AP1 and AP2 layers. The AP1 layer is adjacent to a layer of antiferromagnetic material (AFM layer) and is constructed so as to have a long spin diffusion length. The long spin diffusion length of the AP1 layer minimizes the negative GMR contribution of the AP1 layer, thereby increasing the overall GMR effect of the sensor.
Claims20
A magnetoresistive sensor, comprising:
- a pinned magnetic layer structure, having a first magnetic layer structure (AP1) a second magnetic layer structure (AP2) and a non-magnetic antiparallel coupling layer sandwiched between the (AP1) and (AP2) layers;
- a free magnetic layer structure;
- a non-magnetic layer sandwiched between the free layer and the pinned layer;
- and
- a layer of antiferromagnetic material (AFM layer) adjacent to the AP1 layer of the pinned layer structure;
- wherein
- the AP1 layer structure further comprises:
- a layer of CoFe adjacent to the AFM layer;
- and
- a layer of a metal consisting of a single element metal.
A magnetoresistive sensor, comprising:
- a pinned magnetic layer structure, having a first magnetic layer structure (AP1) a second magnetic layer structure (AP2) and a non-magnetic antiparallel coupling layer sandwiched between the (AP1) and (AP2) layers;
- a free magnetic layer structure;
- a non-magnetic layer sandwiched between the free layer and the pinned layer;
- and
- a layer of antiferromagnetic material (AFM layer) adjacent to the AP1 layer of the pinned layer structure;
- wherein
- the AP1 layer structure further comprises:
- a layer of CoFe adjacent to the AFM layer;
- a first layer of single element metal adjacent to the layer of CoFe;
- a thin layer of Ta;
- and
- a second layer of single element metal, the thin layer of Ta being sandwiched between the first and second layer of single element metal.
A magnetoresistive sensor, comprising:
- a pinned magnetic layer structure, having a first magnetic layer structure (AP1) a second magnetic layer structure (AP2) and a non-magnetic antiparallel coupling layer sandwiched between the (AP1) and (AP2) layers;
- a free magnetic layer structure;
- a non-magnetic layer sandwiched between the free layer and the pinned layer;
- and
- a layer of antiferromagnetic material (AFM layer) adjacent to the AP1 layer of the pinned layer structure;
- wherein
- the AP1 layer structure further comprises:
- a layer of CoFe adjacent to the AFM layer;
- a first layer of single element metal adjacent to the layer of CoFe;
- a layer of Ru;
- and
- a second layer of single element metal, the layer of Ru being sandwiched between the first and second layer of single element metal.
Dependencies are inferred from the claim text.