Wire pad of semiconductor device
AssigneeDongbu HiTek Co., Ltd.
InventorCheon-Man Shim
Life of this patent
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Abstract
A semiconductor device includes a low-k layer formed over a semiconductor device; a first TEOS film formed over the low-k layer; a SiCN layer formed over the first TEOS film; an undoped silicate glass film formed over the SiCN layer; a nitride film formed over the USG film; a second TEOS film formed over the nitride film; a first metal interconnect extending from the low-k layer to the undoped silicate glass film; and a second metal interconnect extending from the nitride film to the second TEOS film, wherein the first metal interconnect and the second metal interconnect are electrically connected and a wire is bonded to the second metal interconnect.
Claims20
An apparatus comprising:
- a low-k layer formed over the upper surface of a semiconductor device;
- an oxide layer formed over the upper surface of the low-k layer;
- a SiCN layer formed over the upper surface of the oxide layer;
- an undoped silicate glass film formed over the upper surface of the SiCN layer;
- a nitride film formed over the upper surface of the undoped silicate glass film;
- a TEOS film formed over the upper surface of the nitride film;
- a first metal interconnect extending from the low-k layer to the undoped silicate glass film;
- and
- a second metal interconnect extending from the nitride film to the TEOS film,
- wherein the first metal interconnect and the second metal interconnect are electrically connected.
An apparatus comprising:
- a low-k layer formed over a semiconductor device;
- a first TEOS film formed over the low-k layer;
- a SiCN layer formed over the first TEOS film;
- an undoped silicate glass film formed over the SiCN layer;
- a nitride film formed over the USG film;
- a second TEOS film formed over the nitride film;
- a first metal interconnect extending from the low-k layer to the undoped silicate glass film;
- and
- a second metal interconnect extending from the nitride film to the second TEOS film,
- wherein the first metal interconnect and the second metal interconnect are electrically connected.
A method comprising:
- forming a low-k layer over a semiconductor device;
- forming an oxide layer over the low-k layer;
- forming a SiCN layer over the oxide layer;
- forming an undoped silicate glass film over the SiCN layer;
- forming a nitride film over the undoped silicate glass film;
- forming a TEOS film over the nitride film;
- forming a first metal interconnect extending from the low-k layer to the undoped silicate glass film;
- and
- forming a second metal interconnect extending from the nitride film to the TEOS film,
- electrically connecting the first metal interconnect and the second metal interconnect.
Dependencies are inferred from the claim text.