Semiconductor devices having tunnel and gate insulating layers and methods of forming the same
AssigneeSamsung Electronics Co., Ltd.
InventorsChul-sung Kim, Young-jin Noh, Bon-young Koo, Sung-kweon Baek
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Abstract
A semiconductor device includes a semiconductor substrate having a surface, buried isolation regions protruding from the surface of the semiconductor substrate, and a first insulating layer on the surface of the semiconductor substrate between the isolation regions and including a fluorine, nitrogen, and/or heavy hydrogen impurity. A floating electrode is on the first insulating layer, a second insulating layer is on the floating electrode and the isolation regions, and a control gate electrode is on the second insulating layer. Related methods of forming semiconductor devices are also disclosed.
Claims22
A semiconductor device comprising:
- a semiconductor substrate having a surface;
- buried isolation regions protruding from the surface of the semiconductor substrate;
- a first insulating layer on the surface of the semiconductor substrate between the isolation regions and comprising a fluorine, nitrogen, and/or heavy hydrogen impurity;
- a floating electrode on the first insulating layer;
- a second insulating layer on the floating electrode and the isolation regions;
- and
- a control gate electrode on the second insulating layer.
A semiconductor device comprising:
- a semiconductor substrate including a surface;
- buried isolation regions protruding from the surface of the semiconductor substrate;
- a first insulating layer on the semiconductor substrate between the isolation regions and comprising a fluorine, nitrogen, and/or heavy hydrogen impurity;
- a floating electrode on the first insulating layer and comprising a first conductive layer and a second conductive layer;
- a second insulating layer on the floating electrode and the isolation regions;
- and
- a control gate electrode on the second insulating layer.
A method of forming a semiconductor device, comprising:
- providing a semiconductor substrate including a surface;
- forming buried isolation regions that protrude from the surface of the semiconductor substrate, and forming a first insulating layer on the semiconductor substrate between the isolation regions;
- forming a conductive layer on the first insulating layer and the isolation regions so that the conductive layer is on the first insulating layer in a space between the isolation regions;
- implanting impurity ions including fluorine, nitrogen, heavy hydrogen, and/or oxygen into the first insulating layer through the conductive layer;
- and
- removing a portion of an upper region of the conductive layer.
A method of forming a semiconductor device, comprising:
- providing a semiconductor substrate having a surface;
- forming partially buried isolation regions that protrude from the surface of the semiconductor substrate, and forming a first insulating layer on the semiconductor substrate between the isolation regions;
- forming a first conductive layer on the first insulating layer and the isolation regions so that the first conductive layer is on the first insulating layer in a space between the isolation regions;
- implanting impurity ions including fluorine, nitrogen, heavy hydrogen, and/or oxygen into the first insulating layer through the first conductive layer;
- and
- forming a second conductive layer in a remaining space on the first conductive layer between the isolation regions.
Dependencies are inferred from the claim text.