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US 2008/0073692 A1Published application
Semiconductor chip and method of forming the same
AssigneeSamsung Electronics Co., Ltd.
InventorsJang-Hee LEE, Geum-Jung SEONG, Byung-Hee KIM, Tae-Ho CHA, Hee-Sook PARK
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Abstract
A method of forming a semiconductor device includes sequentially first and second tungsten silicide layers on a silicon layer. The first tungsten silicide layer is in a substantially amorphous state and a ratio of tungsten to silicon in the first tungsten silicide layer is about 1:4.5˜about 1:9.
Claims20
A semiconductor device comprising:
- a silicon pattern disposed on a substrate;
- a first tungsten silicide pattern disposed on the silicon pattern;
- and
- a second tungsten silicide pattern disposed on the first tungsten silicide pattern,
- wherein the first tungsten silicide pattern is in a substantially amorphous state and a ratio of tungsten to silicon in the first tungsten silicide pattern is about 1:4.5˜about 1:9.
2 more elements
A method of forming a semiconductor device, comprising:
- forming a silicon layer on a substrate;
- forming a first tungsten silicide layer on the silicon layer;
- and
- forming a second tungsten silicide layer on the first tungsten silicide layer,
- wherein the first tungsten silicide pattern is in a substantially amorphous state and a ratio of tungsten to silicon in the first tungsten silicide pattern is about 1:4.5˜about 1:9.
2 more elements
Dependencies are inferred from the claim text.