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US 2008/0073690 A1Published application
Flash memory device including multilayer tunnel insulator and method of fabricating the same
OwnerSung-kweon Baek, Sang-ryol Yang +4inventors
InventorsSung-kweon Baek, Sang-ryol Yang, Si-young Choi, Bon-young Koo, Ki-hyun Hwang, Dong-kak Lee
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Abstract
A flash memory device may include a lower tunnel insulation layer disposed on a substrate, an upper tunnel insulation layer disposed on the lower tunnel insulation layer, a floating gate disposed on the upper tunnel insulation layer, an intergate insulation layer disposed on the floating gate; and a control gate disposed on the intergate insulation layer.
Claims20
A flash memory device, comprising:
- a lower tunnel insulation layer disposed on a substrate;
- an upper tunnel insulation layer disposed on the lower tunnel insulation layer;
- a floating gate disposed on the upper tunnel insulation layer;
- an intergate insulation layer disposed on the floating gate;
- and
- a control gate disposed on the intergate insulation layer.
3 more elements
A flash memory device, comprising:
- a lower tunnel insulation layer disposed on a substrate;
- an upper tunnel insulation layer disposed on the lower tunnel insulation layer;
- a charge trap insulation layer disposed on the upper tunnel insulation layer;
- a blocking layer disposed on the charge trap insulation layer;
- a gate electrode disposed on the blocking layer;
- and
- a dielectric capping layer disposed on the gate electrode.
4 more elements
A method of fabricating a flash memory device, the method comprising:
- forming a lower tunnel insulation layer on a substrate;
- forming an amorphous silicon layer on the lower tunnel insulation layer;
- forming an upper tunnel insulation layer on the amorphous silicon layer;
- forming a floating gate on the upper tunnel insulation layer;
- forming an intergate insulation layer on the floating gate;
- and
- forming a control gate on the intergate insulation layer.
4 more elements
Dependencies are inferred from the claim text.