US 2008/0073682 A1 · Non-volatile semiconductor memory device and method for fabricating the same

Abstract

According to an aspect of the present invention, there is provided a non-volatile semiconductor memory device, including a ferroelectric capacitor being stacked a first electrode, a ferroelectric film and a second electrode in order, a first protective film with hydrogen barrier performance, the first protective film being formed under the first electrode and on a side-wall of the ferroelectric capacitor, the first protective film being widened from the second electrode towards the first electrode, a second protective film with hydrogen barrier performance, the second protective film being formed over the second electrode and on the first protective film formed on the side-wall of the ferroelectric capacitor, the second protective film being widened from the first electrode towards the second electrode, a cell transistor, a source of the cell transistor being connected to the first electrode, a drain of the cell transistor being connected to a bit line and a gate being connected to a word line.

Claims20

Dependent claims

A non-volatile semiconductor memory device, comprising:

a ferroelectric capacitor being stacked a first electrode, a ferroelectric film and a second electrode in order;
a first protective film with hydrogen barrier performance, the first protective film being formed under the first electrode and on a side-wall of the ferroelectric capacitor, the first protective film being widened from the second electrode towards the first electrode;
a second protective film with hydrogen barrier performance, the second protective film being formed over the second electrode and on the first protective film formed on the side-wall of the ferroelectric capacitor, the second protective film being widened from the first electrode towards the second electrode;
a cell transistor, a source of the cell transistor being connected to the first electrode, a drain of the cell transistor being connected to a bit line and a gate being connected to a word line.

1 more element

A method for fabricating a non-volatile semiconductor memory device, comprising:

forming a first protective film with hydrogen barrier performance over a substrate having a cell transistor thereon via an interlayer dielectric film;
stacking a first electrode, a ferroelectric film and a second electrode in order so as to form a ferroelectric capacitor over the first protective film;
etching the first protective film by sputtering etching so as to deposit the first protective film scattered by the etching on the side-wall of the ferroelectric capacitor;
forming a second protective film with hydrogen barrier performance on the first protective film formed on the second electrode and the side-wall of the ferroelectric material by sputtering;
and
connecting a source of the cell transistor to the first electrode, a drain of the cell transistor to bit line, a gate of the cell transistor to a word line and the second electrode to a first potential line.

3 more elements

Dependencies are inferred from the claim text.

Non-volatile semiconductor memory device and method for fabricating the same

Life of this patent

Non-volatile semiconductor memory device and method for fabricating the same

Life of this patent

Abstract

Claims20