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US 2008/0073680 A1Published application
Semiconductor device and fabrication process thereof
AssigneeFujitsu Limited
InventorWensheng Wang
Life of this patent
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Abstract
A semiconductor device includes a conductive oxygen diffusion barrier film formed over a substrate, a metal oxide film formed over the conductive oxygen diffusion barrier film for suppressing diffusion of Pb, a lower electrode containing Pt formed over the metal oxide film, a ferroelectric film containing Pb and formed over the lower electrode, and an upper electrode formed over the ferroelectric film.
Claims18
A semiconductor device comprising:
- a conductive oxygen diffusion barrier film formed over a substrate;
- a metal oxide film formed over said conductive oxygen diffusion barrier film for suppressing diffusion of Pb;
- a lower electrode containing Pt formed over said metal oxide film;
- a ferroelectric film containing Pb and formed over said lower electrode;
- and
- an upper electrode formed over said ferroelectric film.
3 more elements
A method of fabricating a semiconductor device having a ferroelectric film, comprising the steps of:
- forming a MOS transistor on a silicon substrate;
- depositing an interlayer insulation film over said silicon substrate so as to cover said MOS transistor;
- forming a via-plug in said interlayer insulation film in contact with said diffusion region of said transistor;
- forming a conductive oxygen diffusion barrier film over said via-plug;
- forming a metal oxide film suppressing diffusion of Pb over said conductive oxygen diffusion barrier film;
- forming a lower electrode film containing Pt as a primary component over said metal oxide film;
- forming a ferroelectric film containing Pb over said lower electrode film;
- forming an upper electrode over said lower electrode film.
5 more elements
Dependencies are inferred from the claim text.