High-sensitivity image sensor and fabrication method thereof

A method of fabricating a high-sensitivity image sensor, comprising:

• etching a first region of active silicon and a buried oxide layer of a SOI substrate using a mask to expose an N-type silicon substrate;
• growing the exposed N-type silicon substrate to form an active silicon passage;
• etching a second region of the active silicon and the buried oxide layer at a distance to the first region to expose the N-type silicon substrate;
• implanting P-type ions into the second region of the exposed N-type silicon substrate to form P-type regions;
• forming a gate oxide layer and a gate electrode on the active silicon passage;
• forming source and drain regions by implanting P-type ions into a predetermined region including the first region except the second region;
• and
• connecting the P-type regions of the N-type silicon substrate positioned under the lateral faces of a transistor comprising the source and drain regions, and the gate electrode to the gate electrode.

A high-sensitivity image sensor, comprising:

• a photodiode region having a PN junction between an exposed N-type substrate by etching a predetermined region of active silicon and a buried oxide layer, and a P-type region thereon;
• a passage connecting the N-type silicon substrate at a distance to the photodiode region to a channel region of a floating body;
• a gate oxide layer and a gate electrode on the channel region of the floating body;
• and
• a connection part connecting two photodiodes under the lateral faces of the floating body to the gate electrode.

A method of fabricating a high-sensitivity image sensor, comprising:

• etching a first region of active silicon and a buried oxide layer of a SOI substrate using a mask to expose an N-type silicon substrate;
• growing the exposed N-type silicon substrate to form an active silicon passage;
• etching a second region of the active silicon and the buried oxide layer at a distance to the first region to expose the N-type silicon substrate;
• implanting P-type ions into the second region of the exposed N-type silicon substrate to form P-type regions;
• forming a gate oxide layer and a gate electrode on the active silicon passage;
• forming source and drain regions by implanting P-type ions into a predetermined region including the first region except the second region;
• and
• connecting the P-type regions of the N-type silicon substrate positioned under the lateral faces of a transistor comprising the source and drain regions, and the gate electrode to AC voltage.

A high-sensitivity image sensor, comprising:

• a photodiode region having a PN junction between an exposed N-type substrate by etching a predetermined region of active silicon and a buried oxide layer, and a P-type region thereon;
• a passage connecting the N-type silicon substrate at a distance to the photodiode region to a channel region of a floating body;
• a gate oxide layer and a gate electrode on the channel region of the floating body;
• and
• a connection part for applying the AC voltage to two photodiodes under the lateral faces of the floating body.